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Ceremorphic Assigned Patent

Spin orbit torque based memory device

Ceremorphic, Inc., San Jose, CA, has been assigned a patent (12361996) developed by Salimath; Akshaykumar, Debroy; Sanghamitra, Hyderabad, India, and Mattela; Venkat, San Jose, CA, for system and method for spin orbit torque based memory device.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A system and method for a memory device is disclosed. A substrate is provided. A first ferromagnetic layer is disposed over the substrate. A spacer layer is disposed over the first ferromagnetic layer. A second ferromagnetic layer is disposed over the spacer layer and magnetized in a first direction. A first charge current pulse is passed through the substrate, along a direction perpendicular to the first direction and orients the magnetization of the first ferromagnetic layer in a second direction perpendicular to the first direction. A second charge current pulse is passed through the substrate to selectively switch the magnetization of the first ferromagnetic layer either in the first direction or a direction opposite to the first direction based on a direction of the second charge current. The direction of switched orientation of the magnetization of the first ferromagnetic layer indicates a first value or a second value.

The patent application was filed on 2023-05-23 (18/201057).

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