R&D: Solution-based Synthesis of Graphene-MoSe2 Composite for Low Threshold and NVM applications

Surfaces and Interfaces has published an article written by Bijoy Jana, Department of Physics, Jadavpur University, Kolkata, West Bengal 700032, India, Rajesh Mandal, Probodh K Kuiri, Biswanath Mukherjee, Department of Physics, Sidho-Kanho-Birsha University, Purulia, West Bengal 723104, India, Ritasree Sadhukhan, Department of Physics, Jadavpur University, Kolkata, West Bengal 700032, India, Joydip Sengupta, Department of Electronic Science, Jogesh Chandra Chaudhuri College, Kolkata, West Bengal 700033, India, Kaustuv Das, Department of Physics, Jadavpur University, Kolkata, West Bengal 700032, India, and Rajib Nath, Department of Physics, Sidho-Kanho-Birsha University, Purulia, West Bengal 723104, India.

Abstract: “The synthesis of composite structures combining graphene and chalcogenides through various processes has emerged as a pivotal research area for developing advanced electronic materials. In this work, a composite structure of two-dimensional graphene flakes and three-dimensional MoSe₂ flowers has been synthesized using a solution-based method, and their electrical properties have been investigated for nonvolatile memory applications. The graphene-MoSe₂ (Gr-MoSe₂) composites are characterized through X-ray diffraction, electron microscopy (scanning and transmission), Raman spectroscopy, and Atomic Force Microscope (AFM). Electron microscopy images of the composite structures reveal that the MoSe₂ flowers are uniformly distributed across the graphene surface and intercalated between two graphene layers. Additionally, AFM images confirm the successful fabrication of a uniform, well-connected film, demonstrating a high-quality deposition process. Interestingly, the Gr-MoSe₂ composite exhibits nonvolatile resistive switching (ON-OFF ratio ≥ 10⁴) with a low threshold voltage (≤ 1 V). The switching behavior of the device is quite consistent, and the device undergoes the switching behavior over ∼ 10² cycles, making it a potential material for memory applications. The nonvolatile resistive switching mechanism of the Gr-MoSe₂ memory device is explained by the tuning of the Schottky barrier height between the graphene and MoSe₂ layers.“