GlobalFoundries Singapore Assigned Patent

GlobalFoundries Singapore Pte. Ltd., Singapore, Singapore, has been assigned a patent (12363892) developed by Loy; Desmond Jia Jun, Toh; Eng Huat, Balasubramanian; Sriram, and Tan; Shyue Seng, Singapore, Singapore, for “non-volatile memory elements with one-time or multiple-time programmability.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Structures for a non-volatile memory and methods of forming such structures. A gate electrode and a gate dielectric layer are formed over an active region with the gate dielectric layer between the gate electrode and the active region. A first doped region is formed in the active region, a second doped region is formed in the active region, and a source line is coupled to the second doped region. The first doped region is positioned in the active region at least in part beneath the gate dielectric layer, and the second doped region is positioned in the active region adjacent to the first doped region. The first doped region has a first conductivity type, and the second doped region has a second conductivity type opposite to the first conductivity type.”

The patent application was filed on 2022-01-21 (17/580812).