R&D: Heavy Ion Induced SEUs and Layer Dependence in Dual-Deck 3D NAND Flash Memories

IEEE Transactions on Nuclear Science has published an article written by Yang Jiao, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, China, and School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing, China, Jinhu Yang, School of Astronautics, Harbin Institute of Technology, Harbin, China, Qi Wang, Kai Xi, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China, Xinyu Li, Yuzhu Liu, Qiyu Chen, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, China, and School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing, China, Zongzhen Li, Youmei Sun, Peixiong Zhao, and Jie Liu, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, China.

Abstract: “3D NAND technology has garnered increasing attention within space applications as a focal point of commercial competition and industrial evolution in semiconductor memory. With the increase in the number of layers, dual-deck architecture is being gradually integrated into products to reduce process fluctuations and improve the electrical performance. However, it is essential to carefully evaluate the response of such new devices to radiation effects. In this study, the three-dimensional distribution characteristics of single-event upsets (SEUs) were investigated in 128-layer dual-deck 3D NAND Flash memory induced by heavy ion irradiation. By measuring the threshold voltage distribution of charge-trapping cells under different heavy ion conditions, the dependence of the number and size of multi-cell upsets (MCUs) on the linear energy transfer (LET) was analyzed and the underlying physical mechanisms of these radiation effects were explored. Additionally, the variation of SEU along the layer is closely related to the dual-deck structure and channel-hole etch process. This work provides important reference data for improving the reliability design of 3D NAND Flash devices in radiation environments.“