R&D: Six Recent Articles on NVM and others Memories Technologies

R&D: Emerging NVM Technologies in Future of Microelectronics
Examines range of emerging memory materials and device architectures, including resistive random-access memories (ReRAMs), magnetic random-access memories (MRAMs), ferroelectric random-access memories (FeRAMs), and phase-change memories (PCMs).

ACS Omega has published an article written by Linda Katehi, Su-in Yi, Yuxuan Cosmi Lin, Electrical Engineering and Materials Science and Engineering Texas A&M University, College Station, Texas 77843, United States, Sarbajit Banerjee, Chemistry Department, Texas A&M University, College Station, Texas 77843, United States, Qiangfei Xia, Electrical and Computer Engineering, University of Massachusetts, Amherst, Massachusetts 01003, United States, and J. Joshua Yang, Electrical Engineering and Computer Science University of Southern California, Los Angeles, California 90007, USA.

Abstract: “Memory technologies are central to modern computing systems, performing essential functions that range from primary data storage to advanced tasks, such as in-memory computing for artificial intelligence (AI) and machine learning (ML) applications. Initially developed solely for data retention, these technologies are evolving to support new paradigms, such as in-memory computing, where processing occurs directly within the memory array. This evolution significantly enhances computational efficiency by minimizing data transfer between processors and memory, resulting in increased speed and reduced energy consumption, critical factors for AI and ML workloads. Such demanding requirements are driving innovations beyond traditional complementary metal-oxide semiconductor (CMOS) technologies. Emerging nonvolatile memories (eNVMs) represent a promising class of technologies designed to replace or augment conventional volatile memories, such as random-access memory (RAM). Unlike RAM, which loses stored information when the power is disconnected, eNVMs maintain data integrity during power interruptions and system shutdowns. This review examines a range of emerging memory materials and device architectures, including resistive random-access memories (ReRAMs), magnetic random-access memories (MRAMs), ferroelectric random-access memories (FeRAMs), and phase-change memories (PCMs). Additionally, novel eNVMs based on two-dimensional (2D) and organic materials are explored, along with a discussion of the transition from digital to synaptic computing and the potential it offers to address significant technological barriers that may impede the use of AI in accelerating discovery. The discussion encompasses a comprehensive analysis of technological advancements, current development trajectories, and the challenges that still need to be addressed.“

R&D: NAND Flash Memory Scaling and Process Technology Modeling
Work discusses trends in scaling of NAND flash memory, and process technology modeling applications relevant to development of 3D NAND.

ACM Digital Library has published, in GLSVLSI ’25: Proceedings of the Great Lakes Symposium on VLSI 2025, an article written by Mark Kraman, Matt Zhu, and Yan Li, Sandisk Technologies, Inc., Milpitas, USA .

Abstract: “Semiconductor technology development involves managing cost and cycle time in all phases of pre-development, development, ramp, and high volume manufacturing. As NAND flash memory generations progress, fabrication complexity grows, incentivizing the use of advanced predictive modeling to mitigate development risks. To peruse continued innovation efficiently, therefore, NAND memory integrated device manufacturers with the industry together have embraced semiconductor process and device modeling tools to digitize the manufacturing processes of the fab and enable predictive modeling for new device structure concepts, process flow variants, and retrospective defect modeling. This work discusses trends in the scaling of NAND flash memory, and process technology modeling applications relevant to the development of 3D NAND, covering successes and developmental opportunities specifically relating to leading-edge node technology development and pathfinding.“

R&D: Flexible Memory, Progress, Challenges, and Opportunities
Article concludes that flexible memory holds significant potential for applications in wearable electronics, soft robotics, and biomimetic systems, contributing to continuous innovation in information storage technologies.

Advanced Intelligent Discovery has published an article written by Ruizhi Yuan, School of Biomedical Engineering, Tsinghua University, Beijing, China, Sen Chen, Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, China, Minghui Guo, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, China, Ziliang Cui, School of Biological Science and Medical Engineering, Beihang University, Beijing, China, Yujie Du, Academy of Arts & Design, Tsinghua University, Beijing, China, and Jing Liu, School of Biomedical Engineering, Tsinghua University, Beijing, China, and Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, China.

Abstract: “The evolution of information storage technology, from primitive knot-tying to semiconductor-based systems, has been pivotal to advancing human civilization. However, rigid storage devices face critical limitations in mechanical compliance, hindering their integration with emerging flexible electronics. Flexible memory technology, leveraging deformable substrates and novel functional materials, promises as a transformative solution to address these challenges. This review systematically interprets the historical trajectory of storage technologies, critically evaluates the strengths and weakness of conventional rigid systems, and proposes a unified framework for flexible memory technologies based on resistive, phase-change, optical, and magnetic mechanisms. Emphasis is put on the pivotal role of material design – including stretchable organic polymers, liquid materials, and biocompatible hybrids – in achieving mechanical adaptability and functional stability. We further outline a macroscopic energy-field coupling model to bridge electrical, magnetic, optical, and thermal interactions, providing a theoretical foundation for optimizing flexible memory device performance under dynamic deformation. Finally, we clarify critical challenges in balancing mechanical flexibility with electrical stability, scaling fabrication processes, and achieving neuromorphic integration. The article concludes that flexible memory holds significant potential for applications in wearable electronics, soft robotics, and biomimetic systems, contributing to the continuous innovation in information storage technologies.“

R&D: High Speed and Bending Resistance Flexible Phase Change Memory Devices Based on Carbon-Doped Sb₂Te
Introduce carbon-doped Sb₂Te (CST21) films and flexible phase change memory (FPCM) devices fabricated on polyimide (PI) substrates

ACS Applied Electronic Materials has published an article written by Shiwei Gao, Peng Xu, College of Physics, Donghua University, Shanghai 201620, China, Cheng Wang, Yifeng Hu, School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213000, China, and Liangcai Wu, College of Physics, Donghua University, Shanghai 201620, China, and National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.

Abstract: “In this study, we introduce carbon-doped Sb₂Te (CST21) films and flexible phase change memory (FPCM) devices fabricated on polyimide (PI) substrates. The CST21 films exhibit remarkable mechanical and thermal stability, maintaining their phase transition capability even after 100 h of bending at various radii. Thermal cycling tests between 40 and 100 °C for 24 cycles further confirm the films’ excellent thermal stability. Structural and vibrational analyses reveal that the crystal structure and bonding characteristics of the films remain largely unaffected after prolonged bending at radii of 20 and 5 mm. While the films retain a smooth surface at a 20 mm bending radius, a 5 mm radius induces stress concentration, leading to surface cracks and increased roughness. FPCM crossbar devices based on CST21 were fabricated using a photolithographic process, with devices featuring a 2 μm line width demonstrating superior electrical performance compared to their 5 μm counterparts. These devices achieve a high switching speed of ∼6 ns, excellent cycling endurance (∼3000 cycles), a retention time exceeding 10³ s and a low resistance drift (0.004). Notably, even after 4000 bending cycles at a 5 mm radius, the devices maintain a clear distinction between high and low resistance states. This work provides a promising strategy for developing FPCM devices with high operation speed and excellent bending resistance, offering potential for next-generation flexible electronics.“

R&D: Atomic-Scale Engineering of Coupled Ferroic States in BiFeO₃ via Spin–Orbit Selective Implantation for NVM
Work establishes a universal strain-engineering paradigm for lead-free multiferroics, effectively bridging atomic-scale order manipulation with neuromorphic circuit functionality.

Advanced Functional Materials has published an article written by Yongshen Lu, Wen Zhang, Fangwang Fu, Hubei Longzhong Laboratory, Wuhan University of Technology, Xiangyang Demonstration Zone, Xiangyang, 441000 P. R. China, and State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070 P. R. China, Ziheng Chen, Hubei Longzhong Laboratory, Wuhan University of Technology, Xiangyang Demonstration Zone, Xiangyang, 441000 P. R. China, and State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070 P. R. China, Jinyong Zhang, Lin Ren, Weimin Wang, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070 P. R. China, Fan Zhang, and Zhengyi Fu, Hubei Longzhong Laboratory, Wuhan University of Technology, Xiangyang Demonstration Zone, Xiangyang, 441000 P. R. China, and State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070 P. R. China.

Abstract: “The relentless scaling of neuromorphic architectures and edge AI processors necessitates environmentally stable multiferroics capable of overcoming the intrinsic speed-endurance-scalability trade-offs that constrain conventional nonvolatile memories. Although bismuth ferrite (BiFeO₃) exhibits promising room-temperature multiferroic properties, its technological deployment remains impeded by excessive oxygen vacancy concentrations that induce irreversible polarization fatigue and leakage currents exceeding practical thresholds. Here, it is achieved atomic-scale reconstruction of strain-polarization coupling in bulk-like BiFeO₃ thin films through spin-orbit selective implantation of Zr⁴⁺/Ti⁴⁺ ions, thereby decoupling ferroelectric dynamics from defect-mediated degradation mechanisms. A quantized collision model, validated by aberration-corrected scanning transmission electron microscopy, reveals that ion implantation induces anisotropic lattice shear, which triggers collective Fe³⁺ off-centering displacement and polarization rotation via dynamic octahedral coupling. The engineered BiFeO₃ thin film demonstrates enhanced electrical characteristics, achieving a 92% enhancement in remanent polarization along with a three-order-of-magnitude reduction in leakage current density compared to pristine BiFeO₃. Through the synergistic integration of a scalable sol-gel deposition method utilizing environmentally benign precursors with ion-implantation engineering, this work establishes a universal strain-engineering paradigm for lead-free multiferroics, effectively bridging atomic-scale order manipulation with neuromorphic circuit functionality.“

R&D: Spin–Orbit Torque MRAM TCAM for Tested Model With Cross-Layer Three-Level Reliability Amortizing
Article analyzes search errors affecting processing reliability of SOT-TCAM at both device and circuit cross-layer levels and proposes three-level fine-amortizing (TLFA) methodologies to address these issues.

IEEE Transactions on Electron Devices has published an article written by Hongjin Zhu, Zhenghan Fang, Haoran Du, Yibo Liu, School of Integrated Circuits, Southeast University, Nanjing, China, Yan Cui, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China, and School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, China, and Hao Cai, School of Integrated Circuits, Southeast University, Nanjing, China.

Abstract: “Due to the low-tunnel magnetoresistance ratio (TMR) and susceptibility to process variation of industrial spin–orbit torque-magnetic random access memory (SOT-MRAM), the search reliability of previous SOT-based ternary content addressable memory (TCAM) is low. This article analyzes search errors affecting the processing reliability of SOT-TCAM at both device and circuit cross-layer levels and proposes three-level fine-amortizing (TLFA) methodologies to address these issues. To achieve ideal performance based on a practical device, this article proposes a six transistors and four MTJs (6T-4Ms) SOT-TCAM search cell with latch sense achieving in situ high reliability. This design is evaluated based on an industrial 40-nm CMOS technology node and 88-nm perpendicular SOT-MTJ backend-of-line (BEOL) process. The voltage swing of the match line (ΔV_{ML_SW}) is increased to 8.5× compared with the previous SOT-TCAM and soft error rate (SER) reaches <0.1% with high reliability under V_DD = 0.8 V. The energy consumption reaches 3 fJ at V_DD = 0.8 V. With the TLFA methodologies, the search reliability is increased confronted with extreme conditions when V_DD drop to 0.6 V.“