STMicroelectronics Assigned Two Patents

Phase-change memory
STMicroelectronics (Crolles 2) SAS, Crolles, France and STMicroelectronics (Rousset) SAS, Rousset, France, has been assigned a patent (12342734) developed by Boivin; Philippe, Venelles, France, Simola; Roberto, Trets, France, and Moustapha-Rabault; Yohann, Saint-Egrève, France, for a “phase-change memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present description concerns a device including phase-change memory cells, each memory cell including a first resistive element in lateral contact with a second element made of a phase-change material.”

The patent application was filed on 2024-04-25 (18/646334).

Phase-change memory
STMicroelectronics (Crolles 2) SAS, Crolles, France, has been assigned a patent (12336440) developed by Gouraud; Pascal, St Martin, France, and Favennec; Laurent, Villard Bonnot, France, for a “phase-change memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory cell is manufactured by: (a) forming a stack comprising a first layer made of a phase change material and a second layer made of a conductive material; (b) forming a mask on the stack covering only the memory cell location; and (c) etching portions of the stack not covered by the first mask. The formation of the mask covering only the memory cell location comprises defining a first mask extending in a row direction for each row of memory cell locations and then patterning the first mask in a column direction for each column of memory cell locations.”

The patent application was filed on 2022-05-23 (17/751190).