What are you looking for ?
Advertise with us
RAIDON

Faraday Unveils FlashKit-22RRAM eNVM-Based SoC Development Platform for IoT

Built on UMC’s 22ULP process, FlashKit-22RRAM combines embedded Resistive RAM (RRAM, ReRAM) technology

Faraday Technology Corporation introduced its latest FlashKit development platform, FlashKit-22RRAM, designed to accelerate high-performance IoT and MCU applications.

Faraday Logo

Built on UMC’s 22ULP process, FlashKit-22RRAM combines embedded Resistive RAM (RRAM, ReRAM) technology with a rich IP ecosystem and development-ready support, providing a cost-effective and power-efficient SoC solution for edge devices.

Faraday 22rram Block Diagram

The FlashKit-22RRAM platform integrates a full-featured RRAM subsystem with DWORD access, delivering comparable performance with SST eFlash. This solution minimizes extra-mask requirements, making it highly suitable for consumer-grade eNVM applications, such as AIoT, smart home, wearables, and portable devices. It is silicon proven and fully prepared to support customers’ fast ramp-up to volume production on UMC’s 22ULP node.

FlashKit-22RRAM supports embedded CPU options including ARM Cortex-M7 and VeeR EH1 RISC-V, and integrates a set of integrated IPs such as USB 3.0 Type-C, GMAC, and PLL. A built-in RRAM controller with built-in self-test (BIST) ensures streamlined data access and high production reliability. In additional, embedded FPGA (eFPGA) block is included for enhanced design flexibility and enabling post-silicon logic change, ECO, or GPIO re-assignment.

FlashKit-22RRAM demonstrates Faraday’s continued commitment to delivering optimized platforms that reduce development effort and accelerate time-to-market,” said Flash Lin, COO, Faraday Technology. “Our customers now have a highly integrated and cost-efficient path to bring differentiated eNVM-based products to market quickly, with the flexibility to scale for future needs.”

Read also :
Articles_bottom
ExaGrid
AIC
Teledyne
ATTO
OPEN-E