Shanghai Institute of Microsystem and Information Technology/Chinese Academy of Sciences Assigned Patent

Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China, has been assigned a patent (12315543) developed by Chen; Lei, Zeng; Junwen, and Wang; Zhen, Shanghai, China, for “cryogenic memory cell and memory device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A cryogenic memory cell and a memory device are provided. The cryogenic memory cell includes a spin moment transfer device. The spin moment transfer device converts a write current into a spin polarization current and changes a magnetic polarization direction under the action of the spin polarization current to achieve write storage of 0 and 1. The cryogenic memory cell also includes a nano-superconducting quantum interference device; a ground terminal of the nano-superconducting quantum interference device is in common-ground connection with a ground terminal of the spin moment transfer device, and the nano-superconducting quantum interference device undergoes a magnetic flux change under the action of a change in the magnetic polarization direction of the spin moment transfer device, thereby switching between a superconducting state and a non-superconducting state under a read current bias, to achieve read-out of 0 and 1.”

The patent application was filed on 2020-04-10 (17/770621).