IBM Assigned Eleven Patents

Uniform voltage drop in arrays of memory devices
International Business Machines Corporation, Armonk, NY, has been assigned a patent (12317764) developed by Ok; Injo, Loudonville, NY, Seo; Soon-Cheon, Glenmont, NY, Reznicek; Alexander, Troy, NY, and Kim; Youngseok, Upper Saddle River, NJ, for a “uniform voltage drop in arrays of memory devices.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Arrays of PCM devices and techniques for fabrication thereof having an integrated resistor formed during heater patterning for uniform voltage drop amongst the PCM devices are provided. In one aspect, a PCM device includes: at least one PCM cell including a phase change material disposed on a heater; and at least one resistor in series with the at least one PCM cell, wherein the at least one resistor includes a same combination of materials as the heater. A memory array and a method of forming a PCM device are also provided.”

The patent application was filed on 2020-11-06 (17/091513).

Crossbar memory array in back end of line
International Business Machines Corporation, Armonk, NY, has been assigned a patent (12317760) developed by Sadana; Devendra K., Pleasantville, NY, Li; Ning, and Hekmatshoartabari; Bahman, White Plains, NY, for a “crossbar memory array in back end of line.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A bottom electrode, a phase change material layer, the phase change material layer includes a similar lattice constant as a lattice constant of the bottom electrode, and a top electrode vertically aligned. A phase change material layer, a top electrode adjacent to a first vertical side surface of the phase change material layer, and a bottom electrode adjacent to a second vertical side surface of the phase change material layer. Forming a phase change material layer, forming a top electrode adjacent to a first vertical side surface and overlapping a first portion of an upper horizontal surface of the phase change material layer, forming a bottom electrode, adjacent to a second vertical side surface and overlapping a second portion of the upper horizontal surface of the phase change material layer, and forming a dielectric material horizontally isolating the bottom electrode and the top electrode.”

The patent application was filed on 2021-12-07 (17/457928).

Vertical phase change memory device
International Business Machines Corporation, Armonk, NY, has been assigned a patent (12317762) developed by Cheng; Kangguo, Schenectady, NY, Li; Juntao, Cohoes, NY, Radens; Carl, LaGrangeville, NY, and Xie; Ruilong, Niskayuna, NY, for a “vertical phase change memory device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Embodiments of present invention provide a phase change memory (PCM) device. The PCM device includes a first PCM cell with the first PCM cell including an L-shaped phase change element, the L-shaped phase change element having a horizontal portion and a vertical portion on top of the horizontal portion; a selector underneath the horizontal portion of the L-shaped phase change element; a top electrode in contact with a top surface of the vertical portion of the L-shaped phase change element; and a bottom electrode in contact with the selector; and a second PCM cell. A method of manufacturing the PCM device is also provided.”

The patent application was filed on 2022-08-18 (17/820578).

Phase change memory with encapsulated phase change element
International Business Machines Corporation, Armonk, NY, has been assigned a patent (12310262) developed by Kong; Dexin, Redmond, WA, Cheng; Kangguo, Schenectady, NY, Li; Juntao, Cohoes, NY, and Xu; Zheng, Wappingers Falls, NY, for a “phase change memory with encapsulated phase change element.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Semiconductor devices and methods for forming the semiconductor devices are described. An example semiconductor structure can include a substrate including a first electrode. The example semiconductor structure can further include a heater element directly contacting the first electrode in the substrate. The example semiconductor structure a phase change cell directly on the heater element. The sidewalls of the phase change cell can be encapsulated with a spacer. The example semiconductor structure a second electrode directly on the phase change cell and the spacer.”

The patent application was filed on 2021-11-05 (17/519924).

Dome-shaped phase change memory mushroom cell
International Business Machines Corporation, Armonk, NY, has been assigned a patent (12310265) developed by Li; Juntao, Cohoes, NY, Cheng; Kangguo, Liu; Louis Zuoguang, Schenectady, NY, and Gasasira; Arthur Roy, Halfmoon, NY, for a “dome-shaped phase change memory mushroom cell.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A mushroom memory cell may be formed by depositing a second dielectric layer on top of a first dielectric layer and a heater, depositing a hard mask on top of the second dielectric layer, performing a directional reactive-ion etching to remove an exposed portion of the second dielectric layer, performing a lateral etching to remove a portion of the second dielectric layer under the hard mask, performing directional deposition of a phase change material (PCM) over the heater, depositing a covering dielectric over the PCM, performing a second directional etching to expose a top surface of the PCM, and depositing a top electrode on the surface of the PCM.”

The patent application was filed on 2022-06-21 (17/807915).

Crossbar memory array in back end of line with crystallization front
International Business Machines Corporation, Armonk, NY, has been assigned a patent (12295271) developed by Sadana; Devendra K., Pleasantville, NY, Li; Ning, and Hekmatshoartabari; Bahman, White Plains, NY, for a “crossbar memory array in back end of line with crystallization front.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A crystallization seed layer in a substrate, a phase change material layer, the phase change material layer includes a similar lattice constant as a lattice constant of the crystallization seed layer, a top electrode adjacent to a first vertical side surface and a bottom electrode adjacent to a second vertical side surface of the phase change material layer. A plurality of memory structures configured in a crossbar array, each including a crystallization seed layer, a phase change material layer above, a top electrode adjacent to a first vertical side surface and a bottom electrode adjacent to a second vertical side surface of the phase change material layer. A method including forming a crystallization seed layer, forming a phase change material layer, forming a top electrode and a bottom electrode on the substrate, each adjacent to a vertical side surface of the phase change material layer.”

The patent application was filed on 2021-12-07 (17/457930).

Phase change memory cell having pillar bottom electrode with improved thermal insulation
International Business Machines Corporation, Armonk, NY, has been assigned a patent (12274185) developed by Li; Juntao, Cohoes, NY, Xie; Ruilong, Niskayuna, NY, Cheng; Kangguo, Schenectady, NY, and Radens; Carl, LaGrangeville, NY, for a “phase change memory cell having pillar bottom electrode with improved thermal insulation.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A phase-change memory device includes a bottom electrode; a stack of alternating electrical conductor layers directly contacting a top surface of the bottom electrode; a metal pillar directly contacting a top surface of the stack; a phase change material element directly contacting a top surface of the metal pillar; and a top electrode on the phase change material element, wherein a lateral dimension of the metal pillar is smaller than that of the stack.”

The patent application was filed on 2021-10-19 (17/505067).

Low current phase-change memory device
International Business Machines Corporation, Armonk, NY, has been assigned a patent (12274186) developed by Li; Juntao, Cohoes, NY, Cheng; Kangguo, Schenectady, NY, Xie; Ruilong, Niskayuna, NY, and Frougier; Julien, Albany, NY, for a “low current phase-change memory device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A semiconductor structure for a phase-change memory device includes a heater element on a portion of a bottom electrode in a first dielectric material. The semiconductor structure includes a layer of phase-change material that surrounds a portion of a second dielectric material, where the layer of phase-change material forms a three-dimensional shape around the portion of the second dielectric material. A conductive liner is under a first portion of the layer of phase-change material and surrounds a portion of a bottom surface of a hardmask layer and vertical portions of the hardmask layer. A conductive material is on a portion of a top surface of the second dielectric material and abuts the vertical portions of the layer of phase-change material below the conductive liner and the hardmask layer. A top electrode is on a top surface of the conductive material.”

The patent application was filed on 2022-06-07 (17/805707).

PCM cell with nanoheater surrounded with airgaps
International Business Machines Corporation, Armonk, NY, has been assigned a patent (12256653) developed by Li; Juntao, Cohoes, NY, Cheng; Kangguo, Schenectady, NY, Kong; Dexin, Redmond, WA, and Xie; Ruilong, Niskayuna, NY, for a “PCM cell with nanoheater surrounded with airgaps.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A phase change memory (PCM) device is provided. The PCM device includes a bottom electrode formed on a substrate, a heater electrode formed on the bottom electrode, the heater electrode having a tapered portion that becomes narrower in a direction away from the substrate. The PCM device also includes an interlayer dielectric (ILD) layer formed on the tapered portion of the heater electrode, the interlayer layer dielectric including an airgap that at least partially surrounds the tapered portion of the heater electrode. The PCM device also includes a phase change layer formed on the heater electrode, and a top electrode formed on the phase change layer.”

The patent application was filed on 2021-12-09 (17/643416).

Phase change memory cell with double active volume
International Business Machines Corporation, Armonk, NY, has been assigned a patent (12250889) developed by Philip; Timothy Mathew, Albany, NY, Han; Jin Ping, Yorktown Heights, NY, and Brew; Kevin W., Niskayuna, NY, Chen; Ching-Tzu, Ossining, NY, and Ok; Injo, Loudonville, NY, for a “phase change memory cell with double active volume.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A first phase change material layer vertically aligned above a bottom electrode, a dielectric layer vertically aligned above the first phase change material layer, a second phase change material layer vertically aligned above the dielectric layer, an inner electrode physically and electrically connected to the first phase change material layer and the second phase change material layer, the inner electrode surrounded by the dielectric layer, a top electrode vertically aligned above the second phase change material layer. A first phase change material layer vertically aligned above a bottom electrode, a filament layer vertically aligned above the first phase change material layer, a second phase change material layer vertically aligned above the filament layer, an inner break in the filament layer connecting the first phase change material layer and the second phase change material layer, a top electrode vertically aligned above the second phase change material layer.”

The patent application was filed on 2022-03-02 (17/653143).

Phase change memory with concentric ring-shaped heater
International Business Machines Corporation, Armonk, NY, has been assigned a patent (12245530) developed by Cheng; Kangguo, Schenectady, NY, Radens; Carl, LaGrangeville, NY, Li; Juntao, Cohoes, NY, Xie; Ruilong, Niskayuna, NY, Adusumilli; Praneet, Somerset, NJ, van der Straten; Oscar, Guilderland Center, NY, and Reznicek; Alexander, Troy, NY, for a “phase change memory with concentric ring-shaped heater.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A ring-shaped heater, system, and method to gradually change the conductance of the phase change memory through a concentric ring-shaped heater. The system may include a phase change memory. The phase change memory may include a bottom electrode. The phase change memory may also include a ring-shaped heater patterned on top of the bottom electrode, the ring-shaped heater including: a plurality of concentric conductive heating layers, and a plurality of insulator spacers, where each insulator spacer separates each conductive heating layer. The phase change memory may also include a phase change material proximately connected to the ring-shaped heater. The phase change memory may also include a top electrode proximately connected to the phase change material.”

The patent application was filed on 2021-06-25 (17/358223).