Rohm Assigned Two Patents

Non-volatile memory
Rohm Co., Ltd., Kyoto, Japan, has been assigned a patent (12277994) developed by Takenaka; Seiji, Kyoto, Japan, for a “non-volatile memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A non-volatile memory includes a memory cell having a first transistor and a second transistor, a driving circuit arranged to apply a read voltage to gates of the first and second transistors, and a signal output circuit arranged to output a signal associated with a first value or a signal associated with a second value, based on drain currents of the first and second transistors, in a read operation in which the read voltage is applied. The second transistor is constituted of a parallel circuit of a plurality of unit transistors, and gate width of each of the unit transistors is larger than that of the first transistor.”

The patent application was filed on 2021-09-02 (18/247114).

Non-volatile memory
Rohm Co., Ltd., Kyoto, Japan, has been assigned a patent (12224010) developed by Takenaka; Seiji, Kyoto, Japan, for a “non-volatile memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A non-volatile memory has: a first and a second transistor having their gates connected together; a resistor having a first and a second terminal, with the first terminal connected to the source of the first transistor; a read voltage feed circuit configured to feed a read voltage for turning on at least one of the first and second transistors to between the gate of the first transistor and the second terminal of the resistor and to between the gate and the source of the second transistor; and a signal output circuit configured to output, in a read operation in which the read voltage feed circuit feeds the read voltage, a signal associated with a first or second value based on the drain currents of the first and second transistors.”

The patent application was filed on 2021-08-05 (18/021606).