FS-Semi Semiconductor Assigned Patent

FS-Semi Semiconductor Corporation, Ltd., Hsinchu County, Taiwan, has been assigned a patent (12300324) developed by Wang; Lee, Hsinchu County, Taiwan, for “super short channel NOR flash cell array and programming method thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A Super Short Channel NOR-type (SSC NOR) flash array is disclosed. Upon the new Channel Induced Ternary Electron programming scheme for resolving the punch-through issue caused by the gate short channel of NVM cell devices, the gate length of NVM cell devices can be further shrunk below 100 nm for NOR flash array. The cell device of SSC NOR flash can be then scaled down to achieve the minimum cell sizes between 4F.sup.2 to 5F.sup.2, where F is the minimum feature size of a process technology node below 100 nm. In comparison with conventional NOR flash, the SSC NOR flash improves memory density resulting in cost reduction per bit storage. While on the benefit of increasing memory density and storage cost reduction, the invention preserves the typical NOR-type flash advantages over NAND flash on fast nanosecond-range access time, low operating voltages, and high reliability.”

The patent application was filed on 2023-02-14 (18/109663).