TetraMem Assigned Patent

TetraMem Inc., Fremont, CA, has been assigned a patent (12302768) developed by Zhang; Minxian, Amherst, MA, and Ge; Ning, Danville, CA, for “resistive random-access memory devices with multi-component electrodes.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present disclosure relates to resistive random-access memory (RRAM) devices. In some embodiments, a RRAM device may include a first electrode; a second electrode comprising an alloy containing tantalum; and a switching oxide layer positioned between the first electrode and the second electrode, wherein the switching oxide layer includes at least one transition metal oxide. The alloy containing tantalum may further contain at least one of hafnium, molybdenum, tungsten, niobium, or zirconium. In some embodiments, the alloy containing tantalum may include one or more of a binary alloy containing tantalum, a ternary alloy containing tantalum, a quaternary alloy containing tantalum, a quinary alloy containing tantalum, a senary alloy containing tantalum, and a high order alloy containing tantalum.”

The patent application was filed on 2021-05-12 (17/319068).