R&D: Ultra-Large Memory Window for NVM Based on Res2/Hbn/Multilayer Graphene Heterojunction

SSRN has published an article written by Jiawang You, Inner Mongolia University, Wenxiang Wang, Peking University, Xiaohuan Li, Yushi Xu, Jinjin He, Han Mao, Inner Mongolia University, Zheng Wei, affiliation not provided, Lianfeng Sun, National Center for Nanoscience and Technology, Yong Jun Li, Beijing University of Technology, Hang Wei, and Mei Xue, Inner Mongolia University.

Abstract: “With the rapid advancement of technology and the exponential growth of big data, the demand for high-performance memory devices intensifies. Non-volatile memories based on van der Waals materials garner significant attention due to their superior data retention and long-term storage capabilities. However, current floating-gate (FG) memories typically exhibit a memory window of less than 60%, which limits data storage stability and device lifespan. Therefore, developing non-volatile FG memories with larger memory windows is crucial for modern digital technologies. In this work, we fabricate a non-volatile FG memory device based on a rhenium disulfide (ReS2)/hexagonal boron nitride (hBN)/multilayer graphene (MLG) heterostructure. Due to the high carrier mobility of ReS2, and the excellent charge storage and release capabilities of the graphene, the device demonstrates a high on/off ratio (106) and outstanding long-term data retention (>1000 seconds). It also exhibits low programming current and the potential for multi-level storage applications. Most notably, the device achieves a significant memory window of 85.5%, enabling enhanced charge storage capacity and improved stability. These exceptional properties support the realization of efficient and stable data storage, which paves the way for developing next-generation memory technologies.“