Ferrorelectric Memory Assigned Patent

Ferrorelectric Memory GmbH, Dresden, Germany, has been assigned a patent (12283346) developed by Sivero; Stefano, Comun Nuovo, Italy, for a “locally embedded bad sector marking for a memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Disclosed herein is a memory arrangement and method thereof for locally marking bad memory cells. The memory arrangement includes a group of memory cells and a driver circuit for operating the group of memory cells. The driver circuit includes a remanent-polarizable memory element (e.g., a remanent-polarizable field-effect transistor). Depending on a memory state of the remanent-polarizable memory element, the driver circuit enables or disables the operation (e.g., a read/write operation) on the group of memory cells.”

The patent application was filed on 2022-05-06 (17/662382).