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Asahi Kasei Microdevices Assigned Patent

Nonvolatile storage element and analog circuit

Asahi Kasei Microdevices Corp., Tokyo, Japan, has been assigned a patent (12034083) developed by Sakamoto; Toshiro, Takehara; Satoshi, Yamaha; Yoshiro, and Kobayashi; Makoto, Tokyo, Japan, for nonvolatile storage element and analog circuit provided with same.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A nonvolatile storage element includes a substrate; a gate region having a charge holding region and an insulator surrounding an entire surface of the charge holding region; a drain region formed in one of both sides of a lower portion of the gate region; and a source region formed in another one of both the sides. A halogen is distributed in the insulator to cover an entire surface of an upper surface of the charge holding region.

The patent application was filed on 2023-02-10 (18/108519).

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