Hon Hai Precision Industry Assigned Patent

Hon Hai Precision Industry Co., Ltd., New Taipei, Taiwan, has been assigned a patent (12004345) developed by Chen; Chung-Yi, New Taipei, Taiwan, for “semiconductor with extended life time flash memory and fabrication method thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A semiconductor with 3D flash memory storing cells giving an extended life time includes a stack structure in each storing cell, a receiving space crossing through the stack structure, a blocking layer, at least one floating gate layer, and a channel layer. The stack structure includes at least one control gate layer, at least two dielectric layers, and at least one erasing layer. The receiving space comprises a first receiving portion communicating with several second receiving portions. The first receiving portion crosses through the stack structure and the second receiving portions are coplanar with the control gate layer. The blocking layer insulates the floating gate layer from the control gate layers. The erasing layer and floating gate layer form a passageway for electrons when data erasure is required in the semiconductor. A method for fabricating the semiconductor is also disclosed.”

The patent application was filed on 2021-11-30 (17/538000).