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R&D: Wafer-Scale, Efficient In2S3-Based Optical Memory Devices for Neuromorphic Computing

Article demonstrates fabrication and testing of novel memory devices using indium sulfide (In2S3) as active material.

IEEE Transactions on Electron Devices has published an article written by Sharmila B, and Priyanka Dwivedi, Indian Institute of Information Technology (IIIT) Sri City, Chittoor, Sri City, India.

Abstract: This article demonstrates fabrication and testing of novel memory devices using indium sulfide (In2S3) as an active material. A wafer scalable process is used to develop nanostructured In2S3 for the mass production of optical memory devices. The developed devices have shown outstanding light-sensing capability as well as memory functionality. The In2S3 devices are highly responsive toward the 880 nm with higher responsivity and detectivity of 15.88 A/W and 2.84×1011 Jones, respectively. In addition, these optical memory devices were able to mimic cognitive functionalities like high paired-pulse facilitation (PPF) index, long-term plasticity (LTP), and short-term plasticity (STP) compared to the state of the art. The optical memory devices have shown a higher PPF index of 227% and long-term memory (LTM) retention capability of 2×103 s. Devices were optically potentiated for broadband spectrum and reset using electrical stimulation. Moreover, In2S3-based devices have highly repeatable, scalable, stable, and reproducible characteristics at room temperature with a rise/fall time of 0.4/0.01 s. The fabricated optical memory devices can be deployed for future neuromorphic computing applications.

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