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TDK Assigned Patent

Non-volatile associative memory cell, device, monitoring method, and NVM cell

TDK Corporation, Tokyo, Japan, has been assigned a patent (12009019) developed by Kakinuma; Yuji, Tokyo, Japan, for non-volatile associative memory cell, non-volatile associative memory device, monitoring method, and non-volatile memory cell.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A non-volatile associative memory cell includes: one magnetoresistance effect element including first and second ferromagnetic layers and a non-magnetic layer; first and second match lines connected to the magnetoresistance effect element in accordance with predetermined first and second search line voltages. The magnetoresistance effect element includes: first and second members. The first member includes first and second electrodes disposed at opposite ends. The first ferromagnetic layer is in the first or second member, the non-magnetic layer is stacked in the first direction, and the direction of internal magnetization of the first ferromagnetic layer changes in a case in which a current flows between the first and second electrodes. The non-magnetic and the second ferromagnetic layers are in the second member. A magnetoresistance effect element resistance value changes. An electric potential corresponding to an second ferromagnetic layer electric potential is applied to each of the first and second match lines.

The patent application was filed on 2021-06-25 (17/358872).