Uniic Semiconductors Assigned Two Patents

Data backup method and data recovery method for NVDIMM, NVDIMM Controller, and NVDIMM

Xi’an Uniic Semiconductors Co., Ltd., Xi’an, China, has been assigned a patent (11966298) developed by Zhou, Xiaofeng, and Jiang, Xiping, Xi’an, China, for a “data backup method and data recovery method for NVDIMM, NVDIMM Controller, and NVDIMM.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present application provides a data backup method and a restoration method for an NVDIMM, an NVDIMM controller and an NVDIMM. The NVDIMM (200) comprises a DRAM (201), a NAND flash memory (202) and an NVDIMM controller (100), the NVDIMM controller (100) controlling the NVDIMM (200) and comprising a DDR controller (101), a NAND flash memory controller (102), a data backup module (103) and a data restoration module (104), the DDR controller (101) using and enabling DBI mechanism. During data backup, the DDR controller (101) reads N-bit DQ.sub.i and 1-bit DBI from the DRAM (201) and sends the same to the data backup module (103). When DBI.sub.i is “1”, the data backup module (103) compares the DQ.sub.i and DQ.sub.i-1. If the number of bits of the DQ.sub.i and the DQ.sub.i-1 with different values is greater than N/2, then the DQ.sub.i is inverted and the DBI.sub.i is set to “0”, and otherwise the DQ.sub.i and the DBI.sub.i are remained unchanged. When the DBI.sub.i is “0”, the DQ.sub.i and the DBI.sub.i are remained unchanged. The data backup module (103) sends the processed DQ.sub.i and DBI.sub.i to the NAND flash memory controller (102), which then writes the processed DQ.sub.i and DBI.sub.i into the NAND flash memory (202).”

The patent application was filed on 2019-12-24 (17/419609).

Data backup and recovery method for NVDIMM, NVDIMM controller and NVDIMM
Xi’an Uniic Semiconductors Co., Ltd., Xi’an, China, has been assigned a patent (11914484) developed by Zhou, Xiaofeng, and Jiang, Xiping, Xi’an, China, for a “data backup and recovery method for NVDIMM, NVDIMM controller and NVDIMM.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The NVDIMM (200) comprises a DRAM (201), a NAND flash memory (202) and a NVDIMM controller (100), the NVDIMM controller (100) controlling the NVDIMM (200) and comprising a DDR controller (101), a NAND flash memory controller (102), a data backup module (103) and a data recovery module (104), and the DDR controller (101) using and enabling DBI. The backup method comprises: reading, by the DDR controller (101), N-bit DQ and 1-bit DBI from the DRAM (201) and sending the same to the data backup module, encoding, by the data backup module (103), the N-bit DQ and the 1-bit DBI into N-bit EDQ according to the values of the N-bit DQ and the 1-bit DBI, and sending the N-bit EDQ to the NAND flash memory controller, and receiving, by the NAND flash memory controller (102), the N-bit EDQ and writing the N-bit EDQ into the NAND flash memory (202).”

The patent application was filed on 2019-12-24 (17/419518).