Xiangtan University Assigned Patent

Xiangtan University, Hunan, China, has been assigned a patent (11917830) developed by Liao, Min, Dai, Siwei, Huan, Yanwei, Yang, Qijun, Liu, Zhaotong, and Zhou, Yichun, Hunan, China, for “NAND ferroelectric memory cell with three-dimensional structure and preparation method thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A NAND ferroelectric memory cell with a three-dimensional structure and a preparation method thereof are provided, the ferroelectric memory cell comprises: an oxide insulating layer, a channel layer, a channel buffer layer, a ferroelectric layer, and/or a gate buffer layer, and a gate arranged successively from the inside to the outside. In the memory cell of the present disclosure, the buffer layer has the following effects: 1. It can induce the crystallization of ferroelectric film to form ferroelectric phase, 2. It can reduce adverse effects caused by different crystalline characteristics of the channel layer and the ferroelectric layer, improve the quality and uniformity of the deposited film, 3. It can enhance the interface property of the channel layer, reduce leakage current, and enhance endurance of the device. Therefore, the buffer layer can improve the overall storage property and homogeneity of memory cells with a three-dimensional structure.”

The patent application was filed on 2021-09-01 (17/464109).