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University Industry Foundation/Yonsei University Assigned Patent

NVM device and latch including same

UIF (University Industry Foundation), Yonsei University, Seoul, Korea, has been assigned a patent (11955155) developed by Jung, Seong Ook, Kim, Se Keon, Oh, Tae Woo, Lim, Se Hee, and Ko, Dong Han, Seoul, Korea, for nonvolatile memory device and latch including same.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A nonvolatile memory device according to the embodiment includes: a first inverter, and a second inverter cross-coupled to the first inverter, wherein the second inverter includes a pull-up transistor, a pull-down transistor, and a ferroelectric field effect transistor having gate nodes connected to each other, and a restore transistor having one electrode connected to the ferroelectric field effect transistor, and the second inverter stores data in a nonvolatile manner

The patent application was filed on 2022-01-28 (17/588180).

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