Hefei Reliance Memory Assigned Patent

Hefei Reliance Memory Limited, Hefei, China, has been assigned a patent (11950519) developed by Wei, Zhiqiang, Pleasanton, CA, and Lu, Zhichao, San Jose, CA, for “non-volatile memory cell, non-volatile memory cell array, and method of manufacturing the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A non-volatile memory cell includes a bottom electrode, a top electrode having a conductive material, a resistive layer interposed between the bottom electrode and the top electrode, and side portions covering sides of the top electrode and the resistive layer. The side portions contain an oxide of the conductive material. The non-volatile memory cell further includes a contact wire disposed on the top electrode. A width of the contact wire is less than a width between lateral outer surfaces of the side portions.”

The patent application was filed on 2021-12-02 (17/540486).