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University of South Africa Assigned Patent

Non-volatile resistive random access memory and manufacturing method

University of South Africa, Pretoria, South Africa, has been assigned a patent (11944023) developed by Srinivasan, Ananthakrishnan, Vallabhapurapu, Sreedevi, and Vallabhapurapu, Vijaya Srinivasu, Johannesburg, South Africa, for non-volatile resistive random access memory and a manufacturing method.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The invention relates to a non-volatile resistive random access memory (ReRAM), a non-volatile ReRAM composition and to a method for manufacturing a non-volatile non-volatile ReRAM. The ReRAM includes a first electrode, a second electrode and a resistive switching/active layer which is located between the first and second electrodes. The switching layer contains chitosan and aluminium doped/incorporated zinc oxide. The switching/active layer may be configured to perform a switching operation according to an applied voltage. The switching/active layer may be in the form of a film. The switching/active layer may be coated/applied onto the first electrode and the second electrode may be placed/applied/provided over the switching/active layer such that the switching/active layer is located/wedged in-between the two electrodes.

The patent application was filed on 2019-11-26 (17/296826).

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