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Solid State Storage Technology Assigned Patent

Solid state storage device and write control method with different write modes

Solid State Storage Technology Corp., Taipei, Taiwan, has been assigned a patent (11899976) developed by Lin, Liang-You, Peng, Yu-Chuan, Pan, Ya-Ping, and Chen, Po-Yen, Taipei, Taiwan, for solid state storage device and write control method with different write modes therof.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A solid state storage device includes a control circuit, a volatile memory and a non-volatile memory. The non-volatile memory is divided into a first area and a second area. After the host issues a write command and a write data, the control circuit monitors a data amount of the write data continuously stored into the non-volatile memory. Before the data amount of the write data continuously stored into the non-volatile memory reaches a predetermined amount, the write data is stored into plural buffering blocks of the first area in a first write mode. After the data amount of the write data continuously stored into the non-volatile memory reaches the predetermined amount, the write data is stored into plural storing blocks of the second area in a second write mode.

The patent application was filed on 2022-02-23 (17/678067).

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