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Key Foundry Assigned Five Patents

On non-volatile memory

NVM device including sense amplifier and method for operating
Key Foundry Co., Ltd., Cheongju-si, Korea, has been assigned a patent (11848061) developed by Park, Seong Jun, Suwon-si, Korea, Park, Sung Bum, Seongnam-si, Korea, and Ahn, Kee Sik, Hwaseong-si, Korea, for non-volatile memory device including sense amplifier and method for operating the same.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Various embodiments of the present disclosure relate to a non-volatile memory device including a sense amplifier and an operation method thereof. The non-volatile memory device may include: a memory cell array comprising a plurality of memory cells, and the sense amplifier configured to read data of the plurality of memory cells and output the read data. The sense amplifier may include: a first stage sense amplifier configured to sense a voltage difference between a reference voltage and a voltage of a bit line connected to at least one memory cell among the plurality of memory cells, and perform a primary amplification of the sensed voltage difference, and a second stage sense amplifier configured to perform a secondary amplification of a first result of the primary amplification and output a second result of the secondary amplification.

The patent application was filed on 2022-05-11 (17/741635).

Single poly NVM device and manufacturing method
Key Foundry Co., Ltd., Cheongju-si, Korea, has been assigned a patent (11825650) developed by Kim, Su Jin, Cho, Min Kuck, Lee, Jung Hwan, and Jung, In Chul, Cheongju-si, Korea, for single poly non-volatile memory device and manufacturing method thereof.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A single poly non-volatile memory device is provided. The single poly non-volatile memory device is formed in a semiconductor substrate, and includes a sensing transistor, a selection transistor, and a capacitor, wherein a thickness of a selection gate insulating film is formed to be thicker than a thickness of a sensing gate insulating film, wherein a thickness of a control gate insulating film of the capacitor is formed to be the same, or greater than, a thickness of the sensing gate insulating film, and wherein the sensing gate of the sensing transistor and the control gate of the capacitor are physically and electrically connected to each other.

The patent application was filed on 2021-12-29 (17/564367).

Semiconductor device with NVM cell and manufacturing method
Key Foundry Co., Ltd., Cheongju-si, Korea, has been assigned a patent (11757011) developed by Cho, Min Kuck, Kim, Jae Hoon, and Lee, Seung Hoon, Cheongju-si, Korea, for semiconductor device with non-volatile memory cell and manufacturing method thereof.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A manufacturing method of a semiconductor device, includes providing a substrate, forming a stacked gate, including a floating gate and a control gate, on the substrate, forming a stacked gate by a deposition of a select gate conductive layer on the stacked gate, forming a trench in the stacked gate by etching the stacked gate to separate a first select gate pattern and a second select gate pattern, and forming a first select gate, a second select gate, a first transistor, and a second transistor simultaneously through an etch-back process of the stacked gate.

The patent application was filed on 2021-11-18 (17/529695).

NVM device
Key Foundry Co., Ltd., Cheongju-si, Korea, has been assigned a patent (11348931) developed by Cho, Min Kuck, Cheongju-si, Korea, and Lee, Seung Hoon, Busan, Korea, for a nonvolatile memory device.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A nonvolatile memory device includes a cell array formed on a substrate, and a control gate pickup structure, wherein the cell array comprises floating gates, and a control gate surrounding the floating gates, wherein the control gate pickup structure comprises a floating gate polysilicon layer, a control gate polysilicon layer surrounding the floating gate polysilicon layer and connected to the control gate, and at least one contact plug formed on the control gate polysilicon layer.

The patent application was filed on 2020-01-07 (16/735790).

Semiconductor device including NVM and logic device and manufacturing method
Key Foundry Co., Ltd., Cheongju-si, Korea, has been assigned a patent (11289498) developed by Kim, Kwang Il, Kang, Yang Beom, Lee, Jung Hwan, Cho, Min Kuck, Cheongju-si, Korea, and Kim, Hyun Chul, Chilgok-gun, Korea, for semiconductor device including nonvolatile memory device and logic device and manufacturing method of semiconductor device including nonvolatile memory device and logic device.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A semiconductor device include a nonvolatile memory device, including a first well region formed in a substrate, a tunneling gate insulator formed on the first well region, a floating gate formed on the tunneling gate insulator, a control gate insulator formed on the substrate, a control gate formed on the control gate insulator, and a first source region and a first drain region formed on opposite sides of the control gate, respectively, and a first logic device, including a first logic well region formed in the substrate, a first logic gate insulator formed on the first logic well region, a first logic gate formed on the first logic gate insulator, wherein the first logic gate comprises substantially a same material as a material of the control gate of the nonvolatile memory device.

The patent application was filed on 2020-02-26 (16/801266).

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