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Imec and Katholieke Universiteit Leuven Assigned Patent

Memory cell including spin-orbit-torque layer and magnetic tunnel junction layer stacks and writing method

Imec VZW, Leuven, Belgium, and Katholieke Universiteit Leuven, Belgium, has been assigned a patent (11842758) developed by Gupta, Mohit, Garello, Kevin, and Perumkunnil, Manu Komalan, Leuven, Belgium, for a memory cell including a spin-orbit-torque (SOT) layer and magnetic tunnel junction (MTJ) layer stacks and writing method therefor.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “According to an aspect there is provided a memory cell. The memory cell comprises: a first and a second electrode, a spin-orbit-torque, SOT, layer comprising a first and a second electrode contact portion arranged in contact with the first and the second electrode, respectively, and an intermediate portion between the first and second electrode contact portions, a first magnetic tunnel junction, MTJ, layer stack arranged in contact with the intermediate portion, and a second MTJ layer stack arranged in contact with the second electrode contact portion and directly above the second electrode. A memory device comprising such a memory cell and a method for writing to such a memory cell are also provided.

The patent application was filed on 2021-12-09 (17/546553).

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