Kioxia and SK hynix Assigned Patent

Kioxia Corporation, Tokyo, Japan, and Sk Hynix Inc., Gyeonggi-Do, Korea, has been assigned a patent (11776603) developed by Akiyama, Naoki, Seoul, Korea, Yoshino, Kenichi, Seongnam-si, Korea, and Ha, Gayoung, Icheon-si, Korea, for “magnetoresistance memory device and method of manufacturing magnetoresistance memory device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A magnetoresistance memory device includes, first and second switching elements, first and second layer stacks respectively on the first and second switching elements, a first insulator on a side surface of the first layer stack, and a second insulator on a side surface of the second layer stack. Each of the first and second switching elements includes a variable resistance material. Each of the first and second layer stacks includes first and second ferromagnetic layers and an insulating layer between the first and second ferromagnetic layers. A narrowest interval between the first and second insulators is narrower than a narrowest interval between the first and second switching elements.”

The patent application was filed on 2021-06-16 (17/349203).