R&D: Strain Fluctuations Unlock Ferroelectricity in Wurtzites

arxiv has published an article written by Steven M. Baksa, Simon Gelin, Seda Oturak, Susan E. Trolier-McKinstry, Jon-Paul Maria, Department of Materials Science and Engineering, Pennsylvania State University, USA, and Andrew M. Rappe, Department of Chemistry, University of Pennsylvania, USA, and Ismaila Dabo, Department of Materials Science and Engineering, Pennsylvania State University, USA.

Abstract: “Ferroelectric materials are of practical interest for non-volatile data storage due to their reorientable, crystallographically defined polarization states, yet efforts to integrate perovskite-based materials into ultrathin non-volatile memories have been frustrated by film-thickness scaling constraints, which limit ferroelectric switching under low voltage. Wurtzite materials, including magnesium-substituted zinc oxide [(Zn,Mg)O], have recently been shown to exhibit scalable ferroelectricity as thin films. While accurate first-principles calculations predict that a biaxial tension of a few percent may promote ferroelectricity in wurtzites, biaxial strains are found not to exceed 0.3% in (Zn,Mg)O thin films at the solubility limit of Mg in ZnO. In this work, this major discrepancy is resolved and the observations of ferroelectricity in (Zn,Mg)O are explained by examining the influence of Mg substitution on interatomic bonding and ferroelectric switching. Large strain fluctuations emerge locally around individual Zn and Mg cations in (Zn,Mg)O, causing a reduction of up to 45% in the local coercive fields via a sequential mechanism of polarization reversal. This work provides direct quantitative evidence that strain fluctuations can mediate polarization reversal in wurtzites, opening up an avenue to develop scalable ferroelectric materials for ultrathin microelectronics.“