Eugenus Assigned Patent

Eugenus, Inc., San Jose, CA, has been assigned a patent (11832537) developed by Heo, Jae Seok, Dublin, CA, Mack, Jerry, Rathi, Somilkumar J., San Jose, CA, and Mukherjee, Niloy, San Ramon, CA, for a “titanium Silicon nitride barrier layer.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The disclosed technology generally relates to a barrier layer comprising titanium silicon nitride, and more particularly to a barrier layer for nonvolatile memory devices, and methods of forming the same. In one aspect, a method of forming an electrode for a phase change memory device comprises forming over a semiconductor substrate an electrode comprising titanium silicon nitride (TiSiN) on a phase change storage element configured to store a memory state. Forming the electrode comprises exposing a semiconductor substrate to one or more cyclical vapor deposition cycles, wherein a plurality of the cyclical vapor deposition cycles comprises an exposure to a Ti precursor, an exposure to a N precursor and an exposure to a Si precursor.”

The patent application was filed on 2019-10-08 (16/595912).