Northeastern University Assigned Patent
2D materials for use in ultra high density information storage and sensor devices
By Francis Pelletier | January 8, 2024 at 2:00 pmNortheastern University, Boston, MA, has been assigned a patent (11832535) developed by Hennighausen, Zachariah Boston, Mount Rainer, MD, and Kar, Swastik, Belmont, MA, for “two dimensional materials for use in ultra high density information storage and sensor devices.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “2D heterostructures comprising Bi.sub.2Se.sub.3/MoS.sub.2, Bi.sub.2Se.sub.3/MoSe.sub.2, Bi.sub.2Se.sub.3/WS.sub.2, Bi.sub.2Se.sub.3/MoSe.sub.2. .sub.2xS.sub.2x, or mixtures thereof in which oxygen is intercalated between the layers at selected positions provide high density storage devices, sensors, and display devices. The properties of the 2D heterostructures can be configured utilizing abeam of electromagnetic waves or particles in an oxygen controlled atmosphere.”
The patent application was filed on 2019-12-18 (17/416094).
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