R&D: Excessive SSD-Internal Parallelism Considered Harmful
Demonstrating effectiveness of PLAN by evaluating it vs. other state-of-the-art designs across various real-world workloads
This is a Press Release edited by StorageNewsletter.com on December 27, 2023 at 2:00 pmACM Digital Library has published, in HotStorage ’23: Proceedings of the 15th ACM Workshop on Hot Topics in Storage and File Systems, an article written by Xiangqun Zhang, Syracuse University, Syracuse, NY, USA, Shuyi Pei, Memory Solutions Lab, Samsung Semiconductor USA, San Jose, CA, USA, Jongmoo Choi, Dankook University, Yongin, Gyeonggi, Republic of Korea, and Bryan S. Kim, Syracuse University, Syracuse, NY, USA.
Abstract: “Modern SSDs achieve high throughput by utilizing multiple independent channels and chips in parallel. However, we find that excessive parallelism inadvertently amplifies the garbage collection (GC) overhead due to the larger unit of space reclamation. Based on this observation, we design PLAN, a novel SSD parallelism management and data placement scheme that allocates different levels of parallelism to different workloads with different needs to minimize the GC overhead. We demonstrate the effectiveness of PLAN by evaluating it against other state-of-the-art designs across various real-world workloads. PLAN reduces write amplification with comparable or better performance to the other designs that are always at full parallelism.“
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