Korea Institute of Science and Technology Assigned Patent

Korea Institute of Science and Technology, Seoul, Korea, has been assigned a patent (11800705) developed by Kwak, Joon Young, Park, Eunpyo, Lee, Suyoun, Kim, Inho, Park, Jong-Keuk, Kim, Jaewook, Park, Jongkil, and Jeong, YeonJoo, Seoul, Korea, for a “flash memory device used in neuromorphic computing system.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A flash memory device is provided. The flash memory device is disposed on a substrate, a channel layer made of a two-dimensional material, sources and drains disposed at both ends of the channel layer, a tunneling insulating layer having a first dielectric constant and a tunneling insulating layer disposed on the channel layer, a floating gate made of a two-dimensional material, a blocking insulating layer disposed on the floating gate and having a second dielectric constant greater than the first dielectric constant, and an upper gate disposed on the blocking insulating layer.”

The patent application was filed on 2021-11-30 (17/538747).