Samsung Electronics Assigned Fourteen Patents

Storage controller, computational storage device, and operational method of computational storage device
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (11645011) developed by Lee, Hwang, Seoul, Korea, and Heo, Wan, Suwon-si, Korea, for “storage controller, computational storage device, and operational method of computational storage device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A computational storage device includes a non-volatile memory (NVM) device, and a storage controller configured to control the NVM device. The storage controller includes: a computation processor configured to execute an internal application to generate an internal command, a host interface circuit configured to receive a host command from an external host device, to receive the internal command from the computation processor, and to individually process the received host command and the received internal command, a flash translation layer (FTL) configured to perform an address mapping operation based on a result of the processing of the host interface circuit, and a memory interface circuit configured to control the NVM device based on the address mapping operation of the FTL.”

The patent application was filed on 2022-06-01 (17/829980).

Storage device having encryption
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (11644983) developed by Lee, Myeong Jong, Seoul, Korea, Hong, Hyun Sook, Hwaseong-si, Korea, Kim, Ji Soo, Seongnam-si, Korea, and Lee, Seung-Jae, Hwaseong-si, Korea, for a “storage device having encryption.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A storage device includes a non-volatile memory configured to store an encryption key and a data key encrypted with the encryption key, writes data using the data key, and reads the data using the data key, and a storage controller, wherein the storage controller is configured to receive a first security setting command which allows access to the data key, using a first password, generates a first key on the basis of the first password in response to the first security setting command, encrypts the encryption key with the first key to generate a first encrypted encryption key, encrypts the first key with the encryption key to generate an encrypted first key, and stores the first encrypted encryption key and the encrypted first key in the non-volatile memory.”

The patent application was filed on 2021-10-29 (17/514059).

Vertical NVM device
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (11637115) developed by Son, Younghwan, Lee, Boyoung, Lee, Seoungwon, Hwaseong-si, Korea, and Lee, Seunghwan, Seoul, Korea, for a “vertical non-volatile memory device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A vertical non-volatile memory device includes a stack body including gate patterns and interlayer insulating patterns stacked in a stacking direction, the stack body having a through hole, which extends in the stacking direction, in the gate patterns and in the interlayer insulating patterns, a semiconductor pillar in the through hole and extending in the stacking direction, data storage structures between the gate patterns and the semiconductor pillar in the through hole, the data storage structures including charge storage layers, and dummy charge storage layers on a sidewall of the interlayer insulating patterns toward the semiconductor pillar in the through hole.”

The patent application was filed on 2020-06-05 (16/893524).

Non-volatile resistive memory device including plurality of write modes
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (11636895) developed by Lim, Cheaouk, Hwaseong-si, Korea, Sunwoo, Jung, Seoul, Korea, and Lee, Kwangjin, Hwaseong-si, Korea, for a “non-volatile resistive memory device including a plurality of write modes.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A writing method for a non-volatile memory device includes, performing a sensing operation, comparing write data with read data retrieved by the sensing operation, determining whether the write data is set state when the write data and the read data are the same, performing a set operation when the write data is set state, and not performing a write operation when the write data is not set data.”

The patent application was filed on 2020-05-08 (16/870506).

NVM device
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (11631465) developed by Lee, Youn-Yeol, Seoul, Korea, and Hahn, Wook-Ghee, Hwaseong-si, Korea, for a “non-volatile memory device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A non-volatile memory device includes an upper semiconductor layer including a first metal pad and vertically stacked on a lower semiconductor layer. The upper semiconductor layer includes a first memory group spaced apart from a second memory group in a first horizontal direction by a separation region, and the lower semiconductor layer includes a second metal and a bypass circuit underlying at least a portion of the separation region and configured to selectively connect a first bit line of the first memory group with a second bit line of the second memory group. The upper semiconductor layer is vertically connected to the lower semiconductor layer by the first metal pad and the second metal pad.”

The patent application was filed on 2021-10-06 (17/495645).

Storage device including memory controller and operating method of memory controller
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (11620084) developed by Kim, Huijeong, Yongin si, Korea, Kang, Cheolho, Hwaseong si, Korea, and Bae, Duckho, Seoul, Korea, for “storage device including memory controller and operating method of memory controller.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Disclosed are a storage device including a memory controller and a method of operating the memory controller. A storage device according to the technical idea of the present disclosure includes a write buffer for storing write data that is not grouped into a transaction, a non-volatile memory device including a journal buffer where journal logs are stored, a volatile memory device for temporarily storing first metadata, and a memory controller for updating the first metadata to the second metadata based on the journal log stored after the start of the checkpoint among the journal logs stored in the journal buffer.”

The patent application was filed on 2021-09-20 (17/479704).

Method for implementing predictable latency mode feature in SSD, and NVM based storage device
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (11620083) developed by Nadakuditi, Srinivasa Raju, Singh, Abhinav Kumar, Tandavapura Jagadish, Chandrashekar, and Yelakkuru Prabhuswamy, Manu, Bangalore, India, for “method for implementing predictable latency mode feature in SSD, and non-volatile memory (NVM) based storage device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method includes: receiving, by a storage device from a core in a host, a request to provide exclusive resource to a command of a predefined submission queue of a non-volatile memory (NVM) set in the storage device, wherein the request pertains to operating the NVM set in a deterministic state, generating a virtual NVM set identifier for a virtual NVM set based on a predefined mapping of the predefined submission queue and the NVM set, determining a storage controller associated with the NVM set based on a predefined mapping of the predefined submission queue, the NVM set, and the virtual NVM set identifier, enabling at least one core to operate in a Predictable Latency Mode, and operating the storage controller and the NVM set in the deterministic state by allocating predetermined resources to execute the command and return data with a predictable latency.”

The patent application was filed on 2021-09-01 (17/463908).

NVM device, storage device having same, and reading method
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (11610639) developed by Park, Eunhyang, Daegu, Korea, Kim, Jinyoung, Seoul, Korea, Lee, Jisang, Iksan-si, Korea, Park, Sehwan, Yongin-si, Korea, and Park, Ilhan, Suwon-si, Korea, for “non-volatile memory device, storage device having the same, and reading method thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A reading method for a non-volatile memory device, includes performing a normal read operation using a default read level in response to a first read command, and performing a read operation using a multiple on-chip valley search (OVS) sensing operation in response to a second read command, when read data read in the normal read operation are uncorrectable.”

The patent application was filed on 2021-06-02 (17/336378).

NVM device and method of operating
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (11594286) developed by Kwak, Dong-Hun, Hwaseong-si, Korea, for “non-volatile memory device and method of operating the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method of operating a non-volatile memory device includes performing a first sensing operation on the non-volatile memory device during a first sensing time including a first section, a second section, and a third section. The performing of the first sensing operation includes applying a first voltage level, which is variable according to a first target voltage level, to a selected word line in the first section, applying a second voltage level, which is different from the first voltage level, to the selected word line in the second section, and applying the first target voltage level, which is different from the second voltage level, to the selected word line in the third section. The first voltage level becomes greater as the first target voltage level becomes greater.”

The patent application was filed on 2022-02-04 (17/665049).

Non-volatile storage system and data storage access protocol for non-volatile storage devices
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (11586565) developed by Ballapuram, Chinnakrishnan, and Wu, Wentao, San Jose, CA, for “non-volatile storage system and data storage access protocol for non-volatile storage devices.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A non-volatile storage system includes: a host and a storage device. The host includes a submission queue memory, a completion queue memory, and a read/write data memory, and the storage device includes: a controller configured to concurrently communicate with the read/write data memory and with at least one of the submission queue memory and the completion queue memory, and a memory device configured to communicate with the controller.”

The patent application was filed on 2016-12-19 (15/384164).

NVM device, controller for controlling same, storage device having same, and reading method
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (11579972) developed by Shin, Dongmin, Kim, Jinyoung, Seoul, Korea, Park, Sehwan, Yongin-si, Korea, and Seo, Youngdeok, Seoul, Korea, for “non-volatile memory device, controller for controlling the same, storage device having the same, and reading method thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A controller including a non-volatile memory interface circuit connected to at least one non-volatile memory device and configured to control the at least one non-volatile memory device, an error correction circuit configured to perform an error correction operation on a codeword received from the non-volatile memory interface circuit according to an error correction decoding level from among a plurality of error correction decoding levels, wherein the non-volatile memory interface circuit is further configured to: receive side information from the at least one non-volatile memory device, predict a distribution of memory cells based on the side information, and select the error correction decoding level from among the plurality of error correction decoding levels according to the predicted distribution.”

The patent application was filed on 2021-08-11 (17/399528).

Processing commands in storage devices to improve QoS
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (11579805) developed by Anandan, Anbhazhagan, Chennai, India, Tandavapura Jagadish, Chandrashekar, Mysore, India, Balakrishnan, Suman Prakash, Bengaluru, India, and Kavitha Selvaraj, Sarranya, Chennai, India, for “method and system for processing commands in storage devices to improve quality of service.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Operation of a non-volatile memory (NVM) storage module may comprise receiving a plurality of commands as associated with a plurality of priority-based queues from a host-memory. A received command is evaluated in accordance with a priority associated with the queue storing the command and a size of the command. The evaluated command is split into a plurality of sub-commands, each of the sub-commands having a size determined in accordance with the evaluation. A predetermined number of hardware resources are allocated for each of the evaluated command based on at least the size of each of the sub-commands to thereby enable a processing of the evaluated command based on the allocated resources. Quality of service (QoS) for the evaluated-command may thus be augmented.”

The patent application was filed on 2021-03-24 (17/211093).

Storage device and system
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (11573733) developed by Song, Byung June, Suwon-si, Korea, and Yoon, Song Ho, Yongin-si, Korea, for “data storage device and data storage system.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A data storage device including a first non-volatile memory configured to store data, and a device controller configured to control the first non-volatile memory may be provided, and wherein the device controller may be configured to receive a data read command including a first logical address of the first non-volatile memory, a first physical address corresponding to the first logical address, and first status information of the first non-volatile memory corresponding to the first physical address, determine a first read level, using the first status information included in the data read command, and apply a voltage of the first read level to a first word line of the first non-volatile memory corresponding to the first physical address to read data.”

The patent application was filed on 2019-05-16 (16/414129).

Storage device storing data based on key-value and operating method
Samsung Electronics Co., Ltd., Suwon-si, Korea, has been assigned a patent (11573890) developed by Lee, Hwang, Seoul, Korea, Kumar, Satish, Suwon-si, Korea, Kim, Chansoo, Seoul, Korea, and Heo, Wan, Suwon-si, Korea, for “storage device storing data based on key-value and operating method of the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A storage device generates and stores a key stream and a value stream by extracting from data a plurality of keys and a plurality of values respectively corresponding to the plurality of keys. The storage device includes a controller and a non-volatile memory. The controller receives from a host information about an invalid key included in the key stream together with a compaction command, and performs a compaction operation on the key stream in response to the compaction command. The non-volatile memory stores the key stream and the value stream. The controller merges the key stream with another key stream based on the information about the invalid key in the compaction operation.”

The patent application was filed on 2020-09-28 (17/034242).