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National Cheng Kung University Assigned Patent

Ferroelectric memory and memory array device with multiple independently controlled gates

National Cheng Kung University, Tainan, Taiwan, has been assigned a patent (11785778) developed by Lu, Darsen Duane, Tainan, Taiwan, and Lin, Chi-Jen, Changhua County, Taiwan, for ferroelectric memory and memory array device with multiple independently controlled gates.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A multi-gate ferroelectric memory comprises a fin-shaped channel layer, a front ferroelectric layer disposed on one side of the fin-shaped channel layer, a back ferroelectric layer disposed on another side of the fin-shaped channel layer, a front gate attached to the front ferroelectric layer and away from the fin-shaped channel layer, wherein the front gate is configured to connect a word line, and a back gate attached to the back ferroelectric layer and away from the fin-shaped channel layer, wherein the back gate is configured to connect a bit line. The present disclosure further discloses a memory array device, comprises a plurality of the multi-gate ferroelectric memories arranged as an array, a plurality of word lines and a plurality of bit lines.

The patent application was filed on 2021-05-11 (17/317766).

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