Institute of Microelectronics Chinese Academy of Sciences Assigned Patent

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China, has been assigned a patent (11776607) developed by Lv, Hangbing, Luo, Qing, Xu, Xiaoxin, Gong, Tiancheng, and Liu, Ming, Beijing, China, for a “fusion memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present disclosure provides a fusion memory including a plurality of memory cells, wherein each memory cell of the plurality of memory cells includes: a bulk substrate, a source and a drain on the bulk substrate, a channel extending between the source and the drain, a ferroelectric layer on the channel, and a gate on the ferroelectric layer.”

The patent application was filed on 2019-01-28 (17/424998).