Tohoku University Assigned Patent

Tohoku University, Sendai, Japan, has been assigned a patent (11770981) developed by Honjo, Hiroaki, Endoh, Tetsuo, Ikeda, Shoji, Sato, Hideo, and Nishioka, Koichi, Sendai, Japan, for “magnetoresistive element and magnetic memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Provided are a magnetoresistance effect element and a magnetic memory having a shape magnetic anisotropy and using a recording layer having an anti-parallel coupling. A first magnetic layer (3) and a second magnetic layer (5) of the magnetoresistance effect element include a ferromagnetic substance, have a magnetization direction variable to the direction perpendicular to a film surface and are magnetically coupled in an anti-parallel direction, and a junction size D (nm), which is a length of the longest straight line on an end face perpendicular to the thickness direction of the first magnetic layer (3) and the second magnetic layer (5), a film thickness t.sub.1 (nm) of the first magnetic layer (3), and a film thickness t.sub.2 (nm) of the second magnetic layer (5) satisfy relationships D<t.sub.1 and D≤t.sub.1 or D≤t.sub.1 and D<t.sub.2.”

The patent application was filed on 2019-02-19 (17/043404).