Japan Science and Technology Agency Assigned Patent

Japan Science and Technology Agency, Kawaguchi, Japan, has been assigned a patent (11765907) developed by Kobayashi; Masaharu, Mo; Fei, and Hiramoto; Toshiro, Tokyo, Japan, for “ferroelectric memory device and operation method thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A ferroelectric memory device comprising a plurality of ferroelectric memory elements. Each of the plurality of ferroelectric memory elements includes a channel layer containing a metal oxide, a ferroelectric layer in contact with the channel layer in which the ferroelectric layer contains hafnium oxide, a first gate electrode facing the channel layer via the ferroelectric layer, an insulating layer facing the ferroelectric layer via the channel layer; and a second gate electrode facing the channel layer via the insulating layer.”

The patent application was filed on 2022-02-02 (17/591102).