R&D: Materials Enabled Memory Scaling and New Architectures

2023 IEEE International Memory Workshop (IMW) has published an article written by Zhijun Chen, Fred Fishburn, Chang Seok Kang, Sony Varghese, and Bala Haran, Integrated Materials Solutions, Applied Materials, USA.

Abstract: “Both DRAM and NAND evolution over the last decade have come less and less from cell design changes and more from material changes to address higher aspect ratios with reduced feature size variation. We review key processes that have enabled density shrink for both core memory array and the peri transistor. The current shortcomings in scaling DRAM are highlighted and we outline new architectures powered by novel materials and process that overcome these.“