Avalanche Technology Assigned Patent

Avalanche Technology, Inc., Fremont, CA, has been assigned a patent (11758822) developed by Wang, Zihui, Mountain View, CA, and Huai, Yiming, Pleasanton, CA, for a “magnetic memory element incorporating dual perpendicular enhancement layers.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present invention is directed to a magnetic memory element including a magnetic free layer structure incorporating two magnetic free layers separated by a perpendicular enhancement layer (PEL) and having a variable magnetization direction substantially perpendicular to layer planes thereof, an insulating tunnel junction layer formed adjacent to the magnetic free layer structure, a magnetic reference layer structure formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure, an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure, and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The magnetic reference layer structure includes first, second, and third magnetic reference layers separated by two PELs and having a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer has a second invariable magnetization direction substantially opposite to the first invariable magnetization direction.”

The patent application was filed on 2022-07-22 (17/871147).