R&D: Towards Improving Ionizing Radiation Tolerance of 3D NAND Flash Memory

2023 IEEE International Memory Workshop (IMW) has published an article written by Biswajit Ray, Matchima Buddhanoy, and Mondol Anik Kumar, Electrical and Computer Engineering, The University of Alabama in Huntsville, Huntsville, AL, USA.

Abstract: “In this paper we present characterization results of total ionizing dose (TID) effects on commercial 3-D NAND memory. We show the TID induced threshold voltage shift and bit error rate of the memory array. Based on the characterization results we present four system-level techniques that can mitigate TID effects of the commercial 3-D NAND memory.“