R&D: SONOS Embedded Flash IP Using Trap-Depth-Controlled SiN Film Enabling Data Retention More Than 10 years at 200°C

2023 IEEE International Memory Workshop (IMW) has published an article written by Yasuhiro Taniguchi, Shoji Yoshida, Teruhiko Egashira, Floaria Corporation, 1-30-9 Ogawa-Higashi, Kodairashi, Tokyo, Japan, ChihBin Kuo, YiYang Shie, YuChun Wang, ChenYu Huang, Floaria Corporation, 1-30-9 Ogawa-Higashi, Kodairashi, Tokyo, Japan, and Floadia Corporation Taiwan Branch, Center of Innovative Incubator, NTHUNo. 101, Sec. 2, Guangfu Rd., HsinchuCiy, Taiwan, Tsuyoshi Tamatsu, Keiji Okamoto, Masanobu Hishiki, Yasushi Sasaki, Fukuo Owada, Nobuhiko Ito, Yutaka Shinagawa, Floaria Corporation, 1-30-9 Ogawa-Higashi, Kodairashi, Tokyo, Japan, ChihMing Kuo, Floaria Corporation, 1-30-9 Ogawa-Higashi, Kodairashi, Tokyo, Japan, and Floadia Corporation Taiwan Branch, Center of Innovative Incubator, NTHUNo. 101, Sec. 2, Guangfu Rd., Hsinchu Ciy, Taiwan, Satoshi Noda, Toshikazu Matsui, Kosuke Okuyama, Floaria Corporation, 1-30-9 Ogawa-Higashi, Kodairashi, Tokyo, Japan.

Abstract: “We introduce a cost-effective, reliable and energy-efficient embedded-flash memory IP for IoT, industry, and automotive. A Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) type memory is embedded on 130BCD+ process platform with only three additional mask steps. Performance including qualification has been checked as expected at TSMC. By applying trapdepth-controlled SiN film to the SONOS memory, data storage more than 10 years at 200^oC is achieved.“