R&D: Process Improvements for 7th Gen 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass Production
In paper, new highly mass-producible and highly reliable 1Tb QLC 3D NAND flash memory with 176-word-line (WL) and Cell-Over-Peripheral (COP) architecture along with number of significant process advancements will be presented.
This is a Press Release edited by StorageNewsletter.com on September 26, 2023 at 2:00 pm2023 IEEE International Memory Workshop (IMW) has published an article written by Soochan Chung, Dong-Hyeon Ko, Joonsung Lim, Kyungmoon Kim, Sejie Takaki, Yujeong Seo, Byoungil Lee, Sejun Park, Jaeduk Lee, Kyungyoon Noh, Su Jin Ahn, and Sunghoi Hur, Device Solutions Samsung Electronics Co, Pyeongtaek, Korea.
Abstract: “Over the past few decades, a greater need for 3D Vertical NAND (V-NAND) flash memory storage capacity has emerged. Compared to its prevailing technical predecessor, a quad-level cell (QLC) NAND flash memory can be a perfect replacement to meet the needs for the higher density and lower cost non-volatile memory market. However, despite these benefits, QLC’s market share has not been growing significantly because of its worse device reliability and slower performance. In this Paper, a new highly mass-producible and highly reliable 1Tb QLC 3D NAND flash memory with 176-word-line (WL) and Cell-Over-Peripheral (COP) architecture along with a number of significant process advancements will be presented.“
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