STMicroelectronics Assigned Patent

STMicroelectronics (Crolles 2) SAS, Crolles, France, has been assigned a patent (11723220) developed by Berthelon, Remy, Saint Martin d’Heres, France, and Weber, Olivier, Grenoble, France, for “strained transistors and phase change memory.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method for manufacturing an electronic chip includes providing a semiconductor layer located on an insulator covering a semiconductor substrate. First and second portions of the semiconductor layer are oxidized up to the insulator. Stresses are generated in third portions of the semiconductor layer, and each of the third portions extend between two portions of the semiconductor layer that are oxidized. Cavities are formed which extend at least to the substrate through the second portions and the insulator. Bipolar transistors are formed in at least part of the cavities and first field effect transistors are formed in and on the third portions. Phase change memory points are coupled to the bipolar transistors.”

The patent application was filed on 2021-04-29 (17/244514).