Shanghai Huali Microelectronics Assigned Patent

Shanghai Huali Microelectronics Corporation, Shanghai, China, has been assigned a patent (11723197) developed by Zhang, Lei, Hu, Tao, Wang, Xiaochuan, Tian, Zhi, Wang, Qiwei, and Chen, Haoyu, Shanghai, China, for a “semiconductor structure of split gate flash memory cell.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”The present invention provides a semiconductor structure for a split gate flash memory cell and a method of manufacturing the same. The split gate flash memory cell provided by the present invention at least includes a select gate and a floating gate formed on the substrate, one side of the select gate is formed with an isolation wall, and the floating gate is on the other side of the isolation wall. An ion implantation region is formed in an upper portion of the substrate below the isolation wall, wherein the ion implantation type of the ion implantation region is different from the ion implantation type of the substrate. The manufactured split gate flash memory cell can reduce the influence of the channel inversion region on the channel current, thereby improving the characteristics of the channel current of the flash cell and optimizing the device performance.”

The patent application was filed on 2021-08-23 (17/409146).