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CybersWarm Assigned Patent

Programmable resistive memory element and method of making

CybersWarm, Inc., Prahova, Romania, has been assigned a patent (11705198) developed by Dumitru, Viorel-Georgel, Ploiesti, Romania, Besleaga Stan, Cristina, Velea, Alin, Bucharest, Romania, and Galea, Aurelian-Catalin, Magurele, Romania, for programmable resistive memory element and a method of making the same.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.

The patent application was filed on 2021-11-19 (17/531127).

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