CEA, Universite Grenoble Alpes, and CNRS Assigned Patent
Filamentary type NVM device
By Francis Pelletier | August 16, 2023 at 2:00 pmCommissariat a l’Energie Atomique et aux Energies Alternatives (CEA), Paris, France, Universite Grenoble Alpes, Saint-Martin d’Heres, France, and Centre National de la Recherche Scientifique (CNRS), Paris, France, has been assigned a patent (11711927) developed by Navarro; Gabriele, Guillaume; Nicolas, Grenoble, France, Blonkowski; Serge, Meylan, France, Gonon; Patrice, Saint Egrève, France, Jalaguier; Eric, Grenoble, France, for a “filamentary type non-volatile memory device.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A filament type non-volatile memory device, includes a first electrode, a second electrode and an active layer extending between the first electrode and the second electrode, the active layer electrically interconnecting the first electrode to the second electrode, the device being suitable for having: a low resistive state, in which a conducting filament electrically interconnecting the first electrode to the second electrode uninterruptedly extends from end to end through the active layer, the filament having a low electric resistance, and a highly resistive state, in which the filament is broken, the filament having a high electric resistance. The device further includes a shunt resistance electrically connected in parallel to the active layer, between the first electrode and the second electrode.”
The patent application was filed on 2020-08-28 (17/006041).