IBM Assigned Sixteen Patents

Phase change memory cell with airgap to allow for expansion and restriction of PCM material
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11690305) developed by Cheng, Kangguo, Schenectady, NY, Xie, Ruilong, Niskayuna, NY, Radens, Carl, LaGrangeville, NY, and Li, Juntao, Cohoes, NY, for “phase change memory cell with an airgap to allow for the expansion and restriction of the PCM material.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A phase change memory (PCM) cell comprising a substrate a first electrode located on the substrate. A phase change material layer located adjacent to the first electrode, wherein a first side of the phase change material layer is in direct contact with the first electrode. A second electrode located adjacent to phase change material layer, wherein the second electrode is in direct contact with a second side of the phase change material layer, wherein the first side and the second side are different sides of the phase change material layer. An airgap is located directly above the phase change material layer, wherein the airgap provides space for the phase change material to expand or restrict.”

The patent application was filed on 2021-06-09 (17/303836).

Vertical phase change bridge memory cell
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11683998) developed by Li, Juntao, Cohoes, NY, Cheng, Kangguo, Schenectady, NY, Radens, Carl, LaGrangeville, NY, and Xie, Ruilong, Niskayuna, NY, for a “vertical phase change bridge memory cell.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A semiconductor structure for a vertical phase change memory cell that includes a bottom electrode on a portion of a semiconductor substrate and a pair of vertical phase change bridge elements that are each on a portion of the bottom electrode. The semiconductor structure for the vertical phase change memory cell includes a dielectric material separating the pair of vertical phase change bridge elements and a top electrode over the pair of vertical phase change bridge elements.”

The patent application was filed on 2021-03-22 (17/207798).

Projected memory device with reduced minimum conductance state
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11665985) developed by Kersting, Benedikt, Syed, Ghazi Sarwat, Zurich, Switzerland, Jonnalagadda, Vara Sudananda Prasad, Wallisellen, Switzerland, Le Gallo-Bourdeau, Manuel, Zurich, Switzerland, Sebastian, Abu, Adliswil, Switzerland, and Philip, Timothy Mathew, Albany, NY, for a “projected memory device with reduced minimum conductance state.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A memory device enabling a reduced minimal conductance state may be provided. The device comprises a first electrode, a second electrode and phase-change material between the first electrode and the second electrode, wherein the phase-change material enables a plurality of conductivity states depending on the ratio between a crystalline and an amorphous phase of the phase-change material. The memory device comprises additionally a projection layer portion in a region between the first electrode and the second electrode. Thereby, an area directly covered by the phase-change material in the amorphous phase in a reset state of the memory device is larger than an area of the projection layer portion oriented to the phase-change material, such that a discontinuity in the conductance states of the memory device is created and a reduced minimal conductance state of the memory device in a reset state is enabled.”

The patent application was filed on 2020-11-23 (16/949988).

Phase change memory cell with ovonic threshold switch
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11665983) developed by Gong, Nanbo, White Plains, NY, Ando, Takashi, Eastchester, NY, Bruce, Robert L., White Plains, NY, Reznicek, Alexander, Troy, NY, and Hekmatshoartabari, Bahman, White Plains, NY, for a “phase change memory cell with ovonic threshold switch.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A structure including a bottom electrode, a phase change material layer vertically aligned and an ovonic threshold switching layer vertically aligned above the phase change material layer. A structure including a bottom electrode, a phase change material layer and an ovonic threshold switching layer vertically aligned above the phase change material layer, and a first barrier layer physically separating the ovonic threshold switching layer from a top electrode. A method including forming a structure including a liner vertically aligned above a first barrier layer, the first barrier layer vertically aligned above a phase change material layer, the phase change material layer vertically aligned above a bottom electrode, forming a dielectric surrounding the structure, and forming an ovonic threshold switching layer on the first barrier layer, vertical side surfaces of the first buffer layer are vertically aligned with the first buffer layer, the phase change material layer and the bottom electrode.”

The patent application was filed on 2020-12-11 (17/118664).

Integrated switch using stacked phase change materials
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11665987) developed by Li, Juntao, Cohoes, NY, Cheng, Kangguo, Schenectady, NY, Kong, Dexin, Slingerlands, NY, and Xu, Zheng, Wappingers Falls, NY, for an “integrated switch using stacked phase change materials.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”An approach to form a semiconductor structure with a multiple layer phase change material stack and four electrodes that functions as an integrated switch device. The semiconductor structure includes a sidewall spacer that is on two opposing sides of the multiple layer phase change material stack contacting an edge of each layer of the multiple layer phase change material stack. The semiconductor structure includes a pair of a first type of electrode, where each of the pair of the first type of electrode abuts each of the sidewall spacers on the two opposing sides of the multiple layer phase change material stack. A pair of a second type of electrode, where each of the second type of electrode abuts each of two other opposing sides of the multiple layer phase change material stack and contacts a heater material on outside portions of the multiple layer phase change material stack.”

The patent application was filed on 2021-03-04 (17/192223).

Phase-change material-based XOR logic gates
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11653578) developed by Gong, Nanbo, White Plains, NY, Cohen, Guy M., Ossining, NY, and Ando, Takashi, Eastchester, NY, for a “phase-change material-based XOR logic gates.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”An apparatus comprises a phase-change material, a first electrode at a first end of the phase-change material, a second electrode at a second end of the phase-change material, and a heating element coupled to a least a given portion of the phase-change material between the first end and the second end. The apparatus also comprises a first input terminal coupled to the heating element, a second input terminal coupled to the heating element, and an output terminal coupled to the second electrode.”

The patent application was filed on 2020-12-01 (17/108277).

Phase change memory cell with thermal barrier layer
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11647683) developed by BrightSky, Matthew Joseph, Armonk, NY, and Adusumilli, Praneet, Somerset, NJ, for a “phase change memory cell with a thermal barrier layer.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method may include forming a bottom electrode in an interlayer dielectric, depositing a liner on top of the bottom electrode, depositing a phase change material layer on top of the liner, wherein a top surface of the liner is in direct contact with a bottom surface of the phase change material layer, and depositing a barrier on top of the phase change material layer, wherein a top surface of the phase change material layer is in direct contact with a bottom surface of the barrier. The barrier may be made of doped phase change material. The forming of the bottom electrode may further include forming a via in the interlayer dielectric, depositing an outer layer along a bottom and a sidewall of the via, depositing a middle layer on top of the outer layer, and depositing an inner layer on top of the middle layer.”

The patent application was filed on 2019-09-20 (16/576834).

Nonvolatile tunable capacitive processing unit
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11647684) developed by Cohen, Guy M., Westchester, NY, Ando, Takashi, Eastchester, NY, Gong, Nanbo, White Plains, NY, and Li, Yulong, Westchester, NY, for a “nonvolatile tunable capacitive processing unit.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”In an approach for forming a nonvolatile tunable capacitor device, a first electrode layer is formed distally opposed from a second electrode layer, the first electrode layer configured to make a first electrical connection and the second electrode layer configured to make a second electrical connection. A dielectric layer is posited between the first electrode layer and adjacent to the second electrode layer. A phase change material (PCM) layer is posited between the first electrode layer and the second electrode layer adjacent to the dielectric layer. An energizing component is provided to heat the PCM layer to change a phase of the PCM layer. The energizing component may include a heating element or electrical probe in direct contact with the PCM layer, that when energized is configured to apply heat to the PCM layer. The phase of the PCM layer is changeable between an amorphous phase and a crystalline phase.”

The patent application was filed on 2021-03-30 (17/216937).

Multi-layer phase change memory
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11621394) developed by Brew, Kevin W., Niskayuna, NY, Ok, Injo, Loudonville, NY, Han, Jin Ping, Yorktown Heights, NY, Philip, Timothy Mathew, Albany, NY, BrightSky, Matthew Joseph, Armonk, NY, and Saulnier, Nicole, Slingerlands, NY, for a “multi-layer phase change memory device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A phase change memory (PCM) cell comprises a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, a first phase change layer positioned between the first electrode and the second electrode and being comprised of a first phase change material, and a second phase change layer positioned between the first electrode and the second electrode and being comprised of a second phase change material. The first phase change material has a first resistivity, the second phase change material has a second resistivity, and wherein the first resistivity is at least two times the second resistivity.”

The patent application was filed on 2020-12-29 (17/136384).

Phase change memory with improved recovery from element segregation
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11587978) developed by Cheng, Kangguo, Schenectady, NY, for a “phase change memory with improved recovery from element segregation.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method is presented for reducing element segregation of a phase change material (PCM). The method includes forming a bottom electrode, constructing a layered stack over the bottom electrode, the layered stack including the PCM separated by one or more electrically conductive and chemically stable materials, and forming a top electrode over the layered stack. The PCM is Ge—Sb—Te (germanium-antimony-tellurium or GST) and the one or more electrically conductive and chemically stable materials are titanium nitride (TiN) segments.”

The patent application was filed on 2018-09-19 (16/135595).

Phase-change memory with reduced programming voltage
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11588105) developed by Adusumilli, Praneet, Somerset, NJ, Ando, Takashi, Eastchester, NY, Vega, Reinaldo, Mahopac, NY, and Chi, Cheng, Jersey City, NJ, for a “phase-change memory device with reduced programming voltage.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A device includes an electronic component, and the electronic component includes a first pad, a second pad, and a strip connecting the first pad and the second pad. The device further includes a first electrode in contact with the first pad and a second electrode in contact with the second pad. The electronic component is made of a phase change material. At least one of the first electrode and the second electrode is coated with a material that is configured to increase a difference in workfunction between the first electrode and the second electrode.”

The patent application was filed on 2021-03-11 (17/198775).

PCM cell with resistance drift correction
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11563173) developed by Wu, Heng, Guilderland, NY, Xie, Ruilong, Niskayuna, NY, Gong, Nanbo, and Cheng, Cheng-Wei, White Plains, NY, for a “PCM cell with resistance drift correction.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Phase change memory devices and methods of forming the same include forming a fin structure from a first material. A phase change memory cell is formed around the fin structure, using a phase change material that includes two solid state phases at an operational temperature.”

The patent application was filed on 2020-01-07 (16/735759).

Pulsing synaptic devices based on phase-change memory to increase linearity in weight update
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11557343) developed by Carta, Fabio, Pleasantville, NY, BrightSky, Matthew Joseph, Armonk, NY, Kim, Wanki, Chappaqua, NY, Bouvier, Maxence, Paladru, France, and Kim, SangBum, Suwanee, GA, for “pulsing synaptic devices based on phase-change memory to increase the linearity in weight update.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”According to one embodiment, a method, computer system, and computer program product for increasing linearity of a weight update of a phase change memory (PCM) cell is provided. The present invention may include applying a RESET pulse to amorphize the phase change material of the PCM cell, responsive to applying the RESET pulse, applying an incubation pulse to the PCM cell, and applying a plurality of partial SET pulses to incrementally increase the conductance of the PCM cell.”

The patent application was filed on 2021-06-22 (17/304503).

Phase change memory cell resistive liner
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11545624) developed by Cheng, Kangguo, Liu, Zuoguang, Schenectady, NY, Li, Juntao, Cohoes, NY, and Xie, Ruilong, Niskayuna, NY, for a “phase change memory cell resistive liner.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A phase change memory (PCM) cell includes a first electrode, a heater electrically connected to the first electrode, a PCM material electrically connected to the heater, a second electrode electrically connected to the PCM material, and a resistive liner in direct contact with and electrically connected to a sidewall of the heater and to the PCM material.”

The patent application was filed on 2021-03-29 (17/215278).

Reversible resistive memory logic gate
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11489111) developed by Chen, Hsueh-Chung, Cohoes, NY, Wang, Junli, Slingerlands, NY, and Fan, Su Chen, Cohoes, NY, for a “reversible resistive memory logic gate device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A memory device includes two phase change memory (PCM) cells and a bridge. The first PCM cell includes an electrical input and a phase change material. The second PCM cell includes an electrical input that is independent from the electrical input of the first PCM cell and another phase change material. The bridge is electrically connected to the two PCM cells.”

The patent application was filed on 2021-03-29 (17/216622).

Phase change memory cell with projection liner
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11476418) developed by Ok, Injo, Loudonville, NY, Bao, Ruqiang, Niskayuna, NY, Simon, Andrew Herbert, Fishkill, NY, Brew, Kevin W., Niskayuna, NY, Saulnier, Nicole, Slingerlands, NY, Saraf, Iqbal Rashid, Glenmont, NY, and Bhosale, Prasad, Albany, NY, for a “phase change memory cell with a projection liner.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A semiconductor structure may include a heater surrounded by a second dielectric layer, a projection liner on top of the second dielectric layer, and a phase change material layer above the projection liner. A top surface of the projection liner may be substantially flush with a top surface of the heater. The projection liner may separate the phase change material layer from the second dielectric layer. The projection liner may provide a parallel conduction path in the crystalline phase and the amorphous phase of the phase change material layer. The semiconductor structure may include a bottom electrode below and in electrical contact with the heater and a top electrode above and in electrical contact with the phase change material layer.”

The patent application was filed on 2020-12-08 (17/114605).