CEA Assigned Two Patents

Elementary cell comprising resistive memory and associated method of initialization
Commissariat a l’Energie Atomique et aux Energies Alternatives (CEA), Paris, France, has been assigned a patent (11711988) developed by Verdy, Anthonin, Grenoble, France, for an “elementary cell comprising a resistive memory and associated method of initialization.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “An aspect of the invention relates to an elementary cell that includes a breakdown layer made of dielectric having a thickness that depends on a breakdown voltage, a device and a non-volatile resistive memory mounted in series, the device including an upper selector electrode, a lower selector electrode, a layer made in a first active material, referred to as active selector layer, the device being intended to form a volatile selector; the memory including an upper memory electrode, a lower memory electrode, a layer made in at least one second active material, referred to as active memory layer.”

The patent application was filed on 2020-12-16 (17/123643).

Phase-change resistive memory
Commissariat a l’Energie Atomique et aux Energies Alternatives (CEA), Paris, France, has been assigned a patent (11707001) developed by Navarro, Gabriele, Grenoble, France, for a “phase-change resistive memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A phase change resistive memory includes an upper electrode, a lower electrode, a layer made of an active material, called an active layer, the memory passing from a highly resistive state to a weakly resistive state by application of a voltage or a current between the upper electrode and the lower electrode and wherein the material of the active layer is a ternary composed of germanium Ge, tellurium Te and antimony Sb, the ternary including between 60 and 66% of antimony Sb.”

The patent application was filed on 2020-01-27 (16/773226).