Industry-University Cooperation Foundation Hanyang University and PeDiSem Assigned Patent

IUCF-HYU (Industry-University Cooperation Foundation Hanyang University), and PeDiSem Co., Ltd., Seoul, Korea, has been assigned a patent (11688462) developed by Song, Yun Heub, and Song, Chang Eun, Seoul, Korea, for a “three-dimensional flash memory with back gate.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Disclosed is a three-dimensional flash memory including a back gate, which includes word lines extended and formed in a horizontal direction on a substrate so as to be sequentially stacked, and strings penetrating the word lines and extended and formed in one direction on the substrate. Each of the strings includes a channel layer extended and formed in the one direction, and a charge storage layer extended and formed in the one direction to surround the channel layer, the channel layer and the charge storage layer constitute memory cells corresponding to the word lines, and the channel layer includes a back gate extended and formed in the one direction, with at least a portion of the back gate surrounded by the channel layer, and an insulating layer extended and formed in one direction between the back gate and the channel layer.”

The patent application was filed on 2021-06-22 (17/353983).