R&D: Improvement of Memory Performance of 3D NAND Flash Memory with Retrograde Channel Doping

Memories – Materials, Devices, Circuits and Systems has published an article written by Deepika Gupta, Department of Electronic and Communication Engineering, IIIT Naya Raipur, Street, Naya Raipur, 493661, Chhattisgarh, India, Abhishek Kumar Upadhyay, R&D Engineer, X-FAB Dresden GmbH & Co. KG, Grenzstrabe, 01109, Dresden, Germany, Ankur Beohar, Department of Electronic and Communication Engineering, VIT Bhopal, 466114, M.P., India, and Santosh Kumar Vishvakarma, Discipline of Electrical Engineering, IIT Indore, 453556, M.P., India.

Abstract: “The examination of the effect of retrograde channel doping on reliability and performance of 3-D junction-free NAND based flash memory is done for this paper. Specifically, we study the program characteristics, data retention capability junction-free NAND flash memory with half pitch range from 35nm to 12nm. Based on our analysis, we highlight that the retrograde channel doping approach can improve not only the SCEs but also the program speed and data control time for 3-D junction-free NAND flash memory, without varying the oxide stack in charge trap-based flash memory.“